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FQB9N50CF 500V N-Channel MOSFET
October 2006
FRFET
FQB9N50CF
500V N-Channel MOSFET
Features
* 9A, 500V, RDS(on) = 0.85 @VGS = 10 V * Low gate charge ( typical 28nC) * Low Crss ( typical 24pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
D
D
G G S
D2-PAK
FQB Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
Parameter
FQB9N50CF
500 9 5.7 36 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units
V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
300 5 9.6 4.5 173 1.38 -55 to +150 300
Thermal Characteristics
Symbol
RJC RJA RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient
FQB9N50CF
0.72 40 62.5
Units
C/W C/W C/W
* When mounted on the minimum pad size recommended (PCB Mount)
(c)2006 Fairchild Semiconductor Corporation
1
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FQB9N50CF Rev. A
FQB9N50CF 500V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FQB9N50CF FQB9N50CFS
Device
FQB9N50CFTM FQB9N50CFTM_WS
Package
D2-PAK D2-PAK
Reel Size
330mm 330mm
Tape Width
24mm 24mm
Quantity
800 800
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
TC = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 4.5A VDS = 40 V, ID = 4.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz
(Note 4)
Min
500 -----2.0 ------
Typ
-0.57 -----0.7 6.5 790 130 24 18 65 93 64 28 4 15 ---100 300
Max Units
--10 100 100 -100 4.0 0.85 -1030 170 30 45 140 195 125 35 --9 36 1.4 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC A A V ns nC
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 250 V, ID = 9A, RG = 25 ---(Note 4, 5)
---------
VDS = 400 V, ID = 9A, VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 9 A VGS = 0 V, IS = 9 A, dIF / dt = 100 A/s
(Note 4)
--
1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 8mH, IAS = 9A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 9A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
FQB9N50CF Rev. A
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FQB9N50CF 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
Figure 2. Transfer Characteristics
10
1
10
1
ID, Drain Current [A]
ID, Drain Current [A]
150 C -55 C
o
o
25 C
10
0
o
10
0
Notes : 1. 250 s Pulse Test 2. TC = 25
Notes : 1. VDS = 40V 2. 250 s Pulse Test
10
-1
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
2.0
RDS(ON) [ ], Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
VGS = 10V
1.5
10
1
1.0
VGS = 20V
10
0
150 25
10
-1
0.5
Note : TJ = 25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
0
5
10
15
20
25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
2000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
12
VGS, Gate-Source Voltage [V]
1600
10
VDS = 100V VDS = 250V
Capacitance [pF]
Ciss
1200
8
VDS = 400V
Coss
6
800
Crss
400
Notes ; 1. VGS = 0 V 2. f = 1 MHz
4
2
Note : ID = 9A
0 -1 10
0
10
0
10
1
0
5
10
15
20
25
30
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FQB9N50CF Rev. A
3
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FQB9N50CF 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
Notes : 1. VGS = 10 V 2. ID = 4.5 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
10
2
10
10 s
10
1
ID, Drain Current [A]
10
0
Operation in This Area is Limited by R DS(on)
10ms 100ms DC
ID, Drain Current [A]
3
100 s 1ms
8
6
4
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
2
10
-2
10
0
10
1
10
2
10
0 25
50
75
100
o
125
150
VDS, Drain-SourceVoltage[V]
TC, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
10
0
D=0.5
Z? JC Thermal Response (t),
0.2
10
-1
0.1 0.05 0.02 0.01
PDM t1 t2 * Notes : 0 1. ZJC(t) = 0.72 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t)
10
-2
single pulse
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1, Square Wave Pulse Duration [sec]
FQB9N50CF Rev. A
4
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FQB9N50CF 500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQB9N50CF Rev. A
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FQB9N50CF 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQB9N50CF Rev. A
6
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FQB9N50CF 500V N-Channel MOSFET
Mechanical Dimensions
D2-PAK
Dimensions in Millimeters
FQB9N50CF Rev. A
7
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FQB9N50CF 500V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. OCXTM SILENT SWITCHER(R) UniFETTM FACT Quiet SeriesTM ACExTM OCXProTM UltraFET(R) GlobalOptoisolatorTM ActiveArrayTM SMART STARTTM OPTOLOGIC(R) GTOTM BottomlessTM SPMTM VCXTM HiSeCTM Build it NowTM StealthTM WireTM OPTOPLANARTM I2CTM CoolFETTM SuperFETTM PACMANTM CROSSVOLTTM SuperSOTTM-3 POPTM i-LoTM DOMETM SuperSOTTM-6 Power247TM ImpliedDisconnectTM EcoSPARKTM SuperSOTTM-8 PowerEdgeTM IntelliMAXTM E2CMOSTM SyncFETTM PowerSaverTM ISOPLANARTM TCMTM PowerTrench(R) LittleFETTM EnSignaTM TinyBoostTM MICROCOUPLERTM FACTTM QFET(R) TinyBuckTM MicroFETTM FAST(R) QSTM TinyPWMTM MicroPakTM QT OptoelectronicsTM FASTrTM TinyPowerTM MICROWIRETM Quiet SeriesTM FPSTM TinyLogic(R) MSXTM RapidConfigureTM FRFETTM MSXProTM RapidConnectTM TINYOPTOTM SerDesTM Across the board. Around the world.TM TruTranslationTM ScalarPumpTM The Power Franchise(R) UHCTM Programmable Active DroopTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I20
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
8 FQB9N50CF Rev. A
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